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| (R) SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz M177 epoxy sealed ORDER CODE BRANDING SD2923 SD2923 PIN CONNECTION 1. Drain 2. Source 3. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 125 125 20 40 648 200 -65 to 150 4. Source 5. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 0.27 0.15 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2923 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 200 mA VDS = 50 V V DS = 0 V ID = 250 mA ID = 20 A ID = 10 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 8 825 390 55 2 Min. 125 10 10 5 3 Typ . Max. Un it V mA A V V mho pF pF pF REF. 1019132C DYNAMIC Symb ol P OUT G PS D f = 30 MHz f = 30 MHz f = 30 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V P ou t = 300 W P ou t = 300 W P ou t = 300 W I DQ = 250 mA I DQ = 250 mA I DQ = 250 mA I DQ = 250 mA Min. 300 16 50 5:1 Typ . 400 22 55 Max. Un it W dB % VSW R Load f = 30 MHz V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA FREQ . 30 MHz 108 MHz 150 MHz Z IN () 1.8 - j 0.2 1.9 + j 0.2 1.9 + j 0.3 Z DL () 2.8 + j 2.3 1.6 + j 1.4 1.5 + j 1.6 2/8 SD2923 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temperature Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature 3/8 SD2923 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power Output Power vs Voltage Supply Output Power vs Gate Voltage Power Gain vs Output Power Efficiency vs Output Power 4/8 SD2923 30 MHz Test Circuit Schematic + 50V BIAS + - REF.1008706A 30 MHz Test Circuit Component Part List 5/8 SD2923 30 MHz Test Circuit Photomaster SD2923 LOG1101 01/99 Fix# 1 REF.1008706A 30 MHz Production Test Fixture + 6/8 + SD2923 M177 (.550 DIA. 4/L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K 27.43 15.88 5.72 6.73 21.84 28.70 13.84 0.08 2.49 3.81 TYP. MAX. 5.97 6.96 22.10 28.96 14.10 0.18 2.74 4.32 7.11 28.45 16.13 1.080 0.625 MIN. 0.225 0.265 0.860 1.130 0.545 0.003 0.098 0.150 inch TYP. MAX. 0.235 0.275 0.870 1.140 0.555 0.007 0.108 0.170 0.280 1.120 0.635 DIM. Controlling Dimension: Inches 1011012D 7/8 SD2923 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8 |
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